<i>In-plasma</i> analysis of plasma–surface interactions

During deposition, modification, and etching of thin films nanomaterials in reactive plasmas, many active species can interact with the sample simultaneously. This includes neutrals formed by fragmentation feed gas, positive ions, electrons generated electron-impact ionization gas fragments, excited states (in particular, long-lived metastable species), photons produced spontaneous de-excitation atoms molecules. Notably, some these be transiently present during different phases plasma processing, such as layer deposition. To monitor plasma–surface interactions materials a new system combining beams neutral atoms, UV photons, magnetron source has been developed. is equipped unique ensemble in-plasma surface characterization tools, including (1) Rutherford Backscattering Spectrometer (RBS), (2) an Elastic Recoil Detector (ERD), (3) Raman spectroscopy system. RBS ERD analyses are carried out using differentially pumped 1.7 MV ion beam line Tandetron accelerator generating at grazing incidence. The absorber specifically used to detect H initially bonded surface; higher resolution also available through nuclear reaction analysis. In parallel, optical port facing substrate perform analysis samples processing. enables fast monitoring few peaks over nine points scattered on 1.6 × mm2 without interference from inherent light emitted plasma. Coupled various sources, set tools detailed this study provide time-resolved information modification induced By capability, atomic concentrations elements near-surface (e.g., stoichiometry impurity content) monitored real-time deposition or etching. On other hand, evolution function processing time contribute better understanding role low-energy ions defect generation irradiation-sensitive materials, monolayer graphene.